13.9.10 Ultrasonic imaging
The main applications of ultrasound
in imaging are found in medical diagnosis and in industrial testing procedures.
In both of these applications, a short burst of ultrasonic energy is
transmitted from the ultrasonic element into the medium being investigated and
the energy that is reflected back into the element is analysed. Ultrasonic
elements in the frequency range 1 MHz to 15 MHz are used.
Ultrasound is reflected back at all
interfaces between different materials, with the proportion of energy reflected
being a function of the materials either side of the interface. The principal
components inside a human body are water, fat, muscle and bone, and the
interfaces between each of these have different reflectance characteristics.
Measurement of the time between energy transmission and receipt of the
reflected signal gives the depth of the interface according to equation (13.5).
Therefore, in medical diagnosis procedures, the reflected energy appears as a
series of peaks, with the magnitude of each peak corresponding to the type of
interface that it is reflected from and the time of each peak corresponding to
the depth of the interface in the body. Thus, a ‘map’ of fat, muscle and bone
in the body is obtained. A fuller account can be found elsewhere (Webster,
1998).
Applications in industrial test
procedures usually involve detecting internal flaws within components. Such
flaws cause an interface between air and the material that the component is
made of. By timing the reflections of ultrasound from the flaw, the depth of
each flaw is determined.
13.10 Nuclear sensors
Nuclear sensors are uncommon
measurement devices, partly because of the strict safety regulations that
govern their use, and partly because they are usually expensive. Some very
low-level radiation sources are now available that largely overcome the safety problems,
but measurements are then prone to contamination by background radiation. The
principle of operation of nuclear sensors is very similar to optical sensors in
that radiation is transmitted between a source and a detector through some
medium in which the magnitude of transmission is attenuated according to the
value of the measured variable. Caesium-137 is commonly used as a gamma-ray
source and a sodium iodide device is commonly used as a gamma-ray detector. The
latter gives a voltage output that is proportional to the radiation incident
upon it. One current use of nuclear sensors is in a non-invasive technique for
measuring the level of liquid in storage tanks (see Chapter 17). They are also
used in mass flow rate measurement (see Chapter 16) and in medical scanning
applications (see Webster, 1998).
13.11 Microsensors
Microsensors are millimetre-sized
two- and three-dimensional micromachined struc[1]tures
that have smaller size, improved performance, better reliability and lower
production costs than many alternative forms of sensor. Currently, devices to
measure temperature, pressure, force, acceleration, humidity, magnetic fields,
radiation and chemical parameters are either in production or at advanced
stages of research.
Microsensors are usually constructed
from a silicon semiconductor material, but are sometimes fabricated from other
materials such as metals, plastics, polymers, glasses and ceramics that are
deposited on a silicon base. Silicon is an ideal material for sensor
construction because of its excellent mechanical properties. Its tensile
strength and Young’s modulus is comparable to that of steel, whilst its density
is less than that of aluminium. Sensors made from a single crystal of silicon
remain elastic almost to the breaking point, and mechanical hysteresis is very
small. In addition, silicon has a very low coefficient of thermal expansion and
can be exposed to extremes of temperature and most gases, solvents and acids
without deterioration.
Microengineering techniques are an
essential enabling technology for microsensors, which are designed so that
their electromechanical properties change in response to a change in the
measured parameter. Many of the techniques used for integrated circuit (IC)
manufacture are also used in sensor fabrication, common techniques being
crystal growing and polishing, thin film deposition, ion implantation, wet and
dry chemical and laser etching, and photolithography. However, apart from
standard IC production techniques, some special techniques are also needed in
addition to produce the 3D structures that are unique to some types of microsensor.
The various manufacturing techniques are used to form sensors directly in
silicon crystals and films. Typical structures have forms such as thin
diaphragms, cantilever beams and bridges.
Whilst the small size of a
microsensor is of particular benefit in many applications, it also leads to
some problems that require special attention. For example, microsensors
typically have very low capacitance. This makes the output signals very prone
to noise contamination. Hence, it is usually necessary to integrate
microelectronic circuits that perform signal processing in the device, which
therefore becomes a smart microsensor. Another problem is that microsensors
generally produce output signals of very low magnitude. This requires the use
of special types of analogue-to-digital converter that can cope with such
low-amplitude input signals. One suitable technique is sigma–delta conversion.
This is based on charge balancing techniques and gives better than 16-bit accuracy
in less than 20 ms (Riedijk, 1997). Special designs can reduce conversion time
to less than 0.1 ms if necessary.
At present, almost all smart
microsensors have an analogue output. However, a resonant-technology
pressure-measuring device is now available with a digital output. This consists
of a silicon crystal on which two H-shaped resonators are formed, one at the
centre and one at the edge. If the pressure to be measured is applied to the
crystal, the central resonator is compressed, changing the spring constant of
the material and thus reducing its resonant frequency. At the same time, the
outer resonator is stretched, increasing its resonant frequency. The resulting
frequency difference produces a digital output signal that is proportional to
the applied pressure. The device can also give a signal proportional to
differential pressure if this is applied between the centre and periphery of
the crystal.
Microsensors are used most commonly
for measuring pressure, acceleration, force and chemical parameters. They are
used in particularly large numbers in the automotive industry, where unit
prices can be as low as £5–£10. Microsensors are also widely used in medical
applications, particularly for blood pressure measurement, with unit prices
down to £10.
Mechanical microsensors transform
measured variables such as force, pressure and acceleration into a
displacement. The displacement is usually measured by capacitive or
piezoresistive techniques, although some devices use other technologies such as
resonant frequency variation, resistance change, inductance change, the
piezoelectric effect and changes in magnetic or optical coupling. The design of
a cantilever silicon microaccelerometer is shown in Figure 13.15. The proof
mass within this is about 100 µm across and the typical deflection measured is
of the order of 1 micron (10-3 mm).
An alternative capacitive
microaccelerometer provides a calibrated, compensated and amplified output. It
has a capacitive silicon microsensor to measure displacement of the proof mass.
This is integrated with a signal processing chip and protected by a plastic
enclosure. The capacitive element has a 3D structure, which gives a higher
measurement sensitivity than surface-machined elements.
Microsensors to measure many other
physical variables are either in production or at advanced stages of research.
Microsensors measuring magnetic field are based on a number of alternative
technologies such as Hall-effect, magnetoresistors, magnetodiodes and
magnetotransistors. Radiation microsensors are made from silicon p-n diodes or
avalanche photodiodes and can detect radiation over wavelengths from the
visible spectrum to infrared. Microsensors in the form of a micro thermistor, a
p-n thermodiode
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